| Part Number | STB32N65M5 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Low Drain-Source On-Resistance
APPLICATIONS ·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Cu.
*Drain Current *ID=24A@ TC=25℃ *Drain Source Voltage- : VDSS= 650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 119mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Low Drain-Source On-Resistance APPLICATIONS *Swi. |
STB32N65M5 Datasheet and Specifications PDF
The STB32N65M5 is a N-Channel MOSFET.
| Part Number | STB32N65M5 Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout s.
Order codes STB32N65M5 STF32N65M5 STI32N65M5 STP32N65M5 STW32N65M5 VDSS@ TJmax 710 V 710 V 710 V 710 V 710 V RDS(on) max < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω < 0.119 Ω ID
1 3
3 1 2
24 A 24 A(1) 24 A 24 A 24 A
3 12
D²PAK
TO-220FP
I²PAK
1. Limited only by maximum temperature allowed * * * * *. |