STB35N65M5 Datasheet and Specifications PDF

' These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal l.

Type STB35N65M5 STF35N65M5 STI35N65M5 STP35N65M5 STW35N65M5 VDSS @ TJMAX 710 V 710 V 710 V 710 V 710 V RDS(on) max. ID < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω < 0.098 Ω 27 A 27 A(1) 27 A 27 A 27 A 1. Limited only by maximum temperature allowed
* Worldwide best RDS(on)* area
* Higher VDSS rati.

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t.

*With TO-263( D2PAK ) packaging
*High speed switching
*Low gate input resistance
*Standard level gate drive
*Easy to use
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STB35N65M5
*APPLICATIONS
*Power supply
*Switchi.