STB38N65M5 Datasheet and Specifications PDF

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max) ·100% avalanche tested ·Minim.

*Drain Current
*ID=30A@ TC=25℃
*Drain Source Voltage- : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 95mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Switching application ABSOLUTE MAXIMUM RATINGS(T.

* 6 $0Y These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerME.

TAB 2 3 1 D2PAK TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram Order codes VDS @ TJmax RDS(on) max ID STB38N65M5 STP38N65M5 STW38N65M5 710 V 0.095 Ω 30 A
* Higher VDSS rating and high dv/dt capability
* Excellent switching performance
* 100% avalanche tested Applicati.