STB42N65M5 Datasheet
STB42N65M5 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 79mΩ(Max) ·100% avalanche tested ·Minim.
*Drain Current
*ID=33A@ TC=25℃
*Drain Source Voltage-
: VDSS= 650V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 79mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Switching application
ABSOLUTE MAXIMUM RATINGS(T.
STB42N65M5 Datasheet (STMicroelectronics)
STMicroelectronics
AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting produc.
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
TO-220 1 2 3
TO-247
3 2 1
D(2, TAB)
Order codes
VDS
RDS(on) max.
STB42N65M5
STF42N65M5 STP42N65M5
650 V
79 mΩ
STW42N65M5
*
Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% avalanche tested
ID 3.