STB50NF25 Datasheet and Specifications PDF

STB50NF25-VB STB50NF25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.040 at VGS = 10 V 0.045 at VGS = 6 V ID (A) 60 55 Qg (Typ) 95 FE.

* TrenchFET® Power MOSFETS
* 175 °C Junction Temperature
* New Low Thermal Resistance Package
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Industrial RoHS COMPLIANT D D2PAK (TO-263) GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Sy.

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize onresistance and gate charge. It is therefore suitable as primary side swi.

Type STP50NF25 STB50NF25 VDSS 250 V 250 V RDS(on) Max <0.069 Ω <0.069 Ω ID PW 45 A 160 W 45 A 160 W
* 100% avalanche tested
* Gate charge minimized
* Low intrinsic capacitances Application Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STr.