| Part Number | STD2805 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A; IB= -0.25A) ·DC Current Gain -hFE = 85(Min)@ IC= -5A ·Fast -Switching speed ·Minimum Lot-to-Lot variations for robust device. icon PNP Power Transistor STD2805 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage VCE(sat) . |
STD2805 Datasheet and Specifications PDF
The STD2805 is a Silicon PNP Power Transistor.
Key Specifications
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Max Frequency | 150 MHz |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | STD2805 Datasheet |
|---|---|
| Description | Low voltage fast-switching PNP power transistor |
| Manufacturer | STMicroelectronics |
| Overview |
The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
3 1
TO-.
* Very low collector to emitter saturation voltage * High current gain characteristic * Fast-switching speed * Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4) * Through-hole IPAK (TO-251) power package in tube (suffix “-1”) Description The device is manufactured in PNP Plana. |