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STD2805 - Low voltage fast-switching PNP power transistor

General Description

The device is manufactured in PNP Planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Key Features

  • Very low collector to emitter saturation voltage.
  • High current gain characteristic.
  • Fast-switching speed.
  • Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4).
  • Through-hole IPAK (TO-251) power package in tube (suffix “-1”).

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STD2805 Low voltage fast-switching PNP power transistor Preliminary Data Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed ■ Surface-mounting DPAK (TO-252) power package in tape & reel (suffix “T4) ■ Through-hole IPAK (TO-251) power package in tube (suffix “-1”) Description The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 3 1 TO-252 DPAK (suffix “T4”) 3 2 1 TO-251 IPAK (suffix “-1”) Figure 1. Internal schematic diagram Applications ■ CCFL drivers ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching applications Table 1.