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STD2805 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6V(Max)( IC= -5A;

IB= -0.25A) ·DC Current Gain -hFE = 85(Min)@ IC= -5A ·Fast -Switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·CCFL dirvers ·Voltage regulators ·Relay dirvers ·High efficiency low voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A -10 A -2 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 8.33 ℃/W STD2805 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor STD2805 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 V (BR)CEO) Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat)* ICBO Base-Emitter Saturation Voltage Collector Cutoff Current IC=-0.1mA ,IE=0 IC= -100mA;

IB= -5mA IC= -2A;

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