| Part Number | STI13NM60N Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to .
3 12 TO-220FP
TAB
1 23 I2PAK
TAB
TO-220
1 23
3 12
IPAK
Order codes
VDS
RDS(on) max.
STF13NM60N
STI13NM60N STP13NM60N
600 V
360 mΩ
STU13NM60N
* 100% avalanche tested * Low input capacitance and gate charge * Low gate input resistance ID 11 A D(2, TAB) Applications * Switching appli. |
STI13NM60N Datasheet and Specifications PDF
The STI13NM60N is a N-CHANNEL Power MOSFET.
Key Specifications
| Package | TO-262-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 10.75 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | STI13NM60N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Lo.
*Drain Current *ID= 11A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) *100% avalanche tested *Low input capacitance and gate charge *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switchi. |