| Part Number | STP18NM60N Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s .
Order codes
VDSS (@Tjmax)
RDS(on) max.
ID
PW
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
* 100% avalanche tested * Low input capacitance and gate charge * Low gate input resistance Application Switching applications Description These device. |
STP18NM60N Datasheet and Specifications PDF
The STP18NM60N is a Power MOSFET.
| Part Number | STP18NM60N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current ID= 13A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus.
*Drain Current ID= 13A@ TC=25℃ *Drain Source Voltage- : VDSS= 600V(Min) *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE. |