SVF3N80D Datasheet and Specifications PDF

SVF3N80M/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the i.

∗ 3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N80M SVF3N80F SVF3N80D SVF3N80DTR Package Type TO-251-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVF3N80M SVF3N80F SVF3N80D SVF3N80D Mat.

SVF3N80D-VB SVF3N80D-VB Datasheet /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Confi.

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS) APPLICATIONS
* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC.