TIC106N Datasheet and Specifications PDF

The TIC106N is a Thyristors.

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Part NumberTIC106N Datasheet
ManufacturerInchange Semiconductor
Overview isc Thyristors TIC106N APPLICATIONS ·5A contimunous on-state current ·30A surge-current ·Glass passivated ·Max IGT of 200μA ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe. M=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website: 1 isc & iscsemi is registered trade.
Part NumberTIC106N Datasheet
DescriptionP-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR
ManufacturerComset Semiconductors
Overview SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • • • • • • 5 A Continuous On-State Current 30 A Surge-Current. °C °C °C 100 200 300 400 500 600 700 800 100 200 300 400 500 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 29/10/2012 COMSET SEMICONDUCTORS 1|4 datasheet pdf - SEMICONDUCTORS TIC106A, TIC106B, TIC106C, TIC106D, TIC106E, TIC106M, TIC106N, TIC106S THE.
Part NumberTIC106N Datasheet
DescriptionSILICON CONTROLLED RECTIFIER
ManufacturerBourns
Overview TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and no. perature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds VDRM VRRM IT(RMS) IT(AV) ITSM IGM PGM PG(AV) TC Tstg TL VALUE 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A A W W °C °C °C NOTES: 1. These values apply wh.
Part NumberTIC106N Datasheet
Description5A SCR
ManufacturerQidong Jilai
Overview ® Jinglin Qidong Jilai Electronics Co., Ltd. SEMICONDUCTOR TECHNICAL DATA TIC106 Series(5A SCRS) TIC106 series 5A Continuous On-State Current 400V to 800V Off-State Voltage Max IGT of 200 A TO-220 . ter Rth(j-c) Junction to case thermal resistance Rtj(j-a) Junction to free air thermal resistance Value 3.5 62.5 Unit /W /W ELECTRICAL CHARACTERISTICS at 25 case temperature Symbol Testing conditions Min. Typ. Max. Unit IGT VGT IH VTM IDRM IRRM dv/dt VAA=6V, RL=100 , tp(g) 20 s VAA=6V, R.