| Part Number | TIP106 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | TIP105/TIP106/TIP107 — PNP Epitaxial Silicon Darlington Transistor TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • Monolithic Construction With Built In Base-Emitter Shunt Resistor. . |
TIP106 Datasheet
The TIP106 is a PNP Epitaxial Silicon Darlington Transistor.
| Part Number | TIP106 |
|---|---|
| Description | Silicon PNP Transistor |
| Manufacturer | onsemi |
| Overview |
Complementary Silicon Transistors, Plastic, Medium-Power
TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP)
Designed for general−purpose amplifier and low−speed switching applications.
Feature.
* High DC Current Gain * hFE = 2500 (Typ) @ IC = 4.0 Adc * Collector *Emitter Sustaining Voltage * @ 30 mAdc VCEO(sus) = 60 Vdc (Min) * TIP100, TIP105 = 80 Vdc (Min) * TIP101, TIP106 = 100 Vdc (Min) * TIP102, TIP107 * Low Collector *Emitter Saturation Voltage * VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc . |
| Part Number | TIP106 |
|---|---|
| Description | Silicon PNP Darlington Power Transistors |
| Manufacturer | Comset Semiconductors |
| Overview | SEMICONDUCTORS PNP TIP105-106-107 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for genera. tasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS PNP TIP105-106-107 THERMAL CHARACTERISTICS Symbol RthJ-case RthJ-amb From junction-case From junction-ambient Ratings Value 1.56 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Conditi. |
| Part Number | TIP106 |
|---|---|
| Description | PNP Epitaxial Silicon Darlington Transistor |
| Manufacturer | SEMIHOW |
| Overview | TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4. . |