The TIP142 is a COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS.
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | TIP142 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier an. YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, IC=10A VF IF=10A hFE VCE=4.0V, IC=5.0A 1.0K h. |
| Part Number | TIP142 Datasheet |
|---|---|
| Description | NPN Epitaxial Silicon Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | TIP140/141/142 TIP140/141/142 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145/. IP140 : TIP141 : TIP142 ICBO Collector Cut-off Current : TIP140 : TIP141 : TIP142 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fa. |
| Part Number | TIP142 Datasheet |
|---|---|
| Description | Darlington Complementary Silicon Power Transistors |
| Manufacturer | onsemi |
| Overview |
DATA SHEET
Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
Designed for general−purpose amplifier and low frequency swi.
* High DC Current Gain * Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V * Collector *Emitter Sustaining Voltage * @ 30 mA VCEO(sus) = 60 Vdc (Min) * TIP140, TIP145 = 80 Vdc (Min) * TIP141, TIP146 = 100 Vdc (Min) * TIP142, TIP147 * Monolithic Construction with Built *In Base *Emitter Shunt Resistor * These are . |
| Part Number | TIP142 Datasheet |
|---|---|
| Description | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
| Manufacturer | Wing Shing Computer Components |
| Overview | TIP140/141/142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR •Complementary to TIP145/146/147 SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :TI. ase- Emitter Saturation Voltage Base- Emitter On Voltage Delay Time Rise Time Storage Time Fall Time Symbol VCEO(SUS) Test Condition IC=30mA, IB=0 Min 60 80 100 Typ Max Unit V V V mA mA mA mA mA mA mA ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) td tr ts tf VCE= 30V , IB=0 IB=0 VCE= 40V , . |
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| Part Number | Manufacturer | Description |
|---|---|---|
| TIP142T | STMicroelectronics | Complementary power Darlington transistors |
| TIP142F | Fairchild Semiconductor | NPN Epitaxial Darlington Transistor |
| TIP142T | Fairchild Semiconductor | NPN Epitaxial Silicon Darlington Transistor |
| TIP142G | onsemi | Darlington Complementary Silicon Power Transistors |
| TIP142T | Transys | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
| TIP142 | Multicomp | Darlington Transistors |
| TIP142 | Bourns Electronic | NPN SILICON POWER DARLINGTONS |