TIP36A Datasheet and Specifications PDF

The TIP36A is a Complementary Silicon Power Transistor.

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Part NumberTIP36A Datasheet
ManufacturerNell Power Semiconductor
Overview SEMICONDUCTOR TIP35 (NPN) Series TIP36 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 25A/40~100V/125W 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0. Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-3P package which can be installed to the heat sink with one screw Collector - Emitter Saturation Voltage: VCE(sat) = 1.8Vdc (MAX.) @ IC = 15A Collector - Emitter .
Part NumberTIP36A Datasheet
DescriptionPNP SILICON POWER TRANSISTORS
ManufacturerPower Innovations Limited
Overview TIP36, TIP36A, TIP36B, TIP36C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 q Designed for Complementary Use with the TIP35 Series 125 . Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE -80 -100 -120 -140 -40 -60 -80 -100 -5 -25 -40 -5 125 3.5 90 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value appli.
Part NumberTIP36A Datasheet
DescriptionComplementary Silicon High-Power Transistors
Manufactureronsemi
Overview Complementary Silicon High-Power Transistors TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Designed for general−purpose power amplifier and switching applications. Features • 25 A Collec.
* 25 A Collector Current
* Low Leakage Current
* ICEO = 1.0 mA @ 30 and 60 V
* Excellent DC Gain
* hFE = 40 Typ @ 15 A
* High Current Gain Bandwidth Product
* ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz
* These are Pb
*Free Devices* MAXIMUM RATINGS Symbol Rating TIP35A TIP35B TIP35C TIP36A TIP36B T.
Part NumberTIP36A Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview With TO-3PN package ·Complement to type TIP35/35A/35B/35C ·DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS ·Designed for use in general purpose power amplifier and switching appl. to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER TIP36 Collector-emitter sustaining voltage TIP36A IC=-30mA ;IB=0 TIP36B TIP36C VCE(sat)-1 VCE(sat)-2 VBE-1 VBE-2 Collector-emitter saturat.