| Part Number | TK12A50D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
TK12A50D
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.52Ω (MAX) ·Enhancement mode:
Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-t.
*Low drain-source on-resistance: RDS(ON) = 0.52Ω (MAX) *Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=1.0mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
TK12A50D Datasheet
The TK12A50D is a N-Channel MOSFET.
| Part Number | TK12A50D |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Toshiba |
| Overview | TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward tr. mperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate re. |