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TK20E60W Datasheet

The TK20E60W is a Silicon N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberTK20E60W
ManufacturerToshiba
Overview TK20E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK20E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Sup. (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute M.
Part NumberTK20E60W
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview Isc N-Channel MOSFET Transistor TK20E60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 155mΩ (MAX) ·Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot.
*Low drain-source on-resistance: RDS(ON) = 155mΩ (MAX)
*Enhancement mode: Vth =2.7 to 3.7V (VDS = 10 V, ID=1mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.

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