TK5A90E Datasheet and Specifications PDF

The TK5A90E is a N-Channel MOSFET.

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Part NumberTK5A90E Datasheet
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK5A90E，ITK5A90E ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤3.1Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA) ·100% av.
*Low drain-source on-resistance: RDS(on) ≤3.1Ω.
*Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.45mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*Switching Voltage Regulators
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL.
Part NumberTK5A90E Datasheet
DescriptionN-Channel MOSFET
ManufacturerToshiba
Overview MOSFETs Silicon N-Channel MOS (π-MOS) TK5A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.5 Ω (typ.) (2) Low leakage current : IDSS = 1. (1) Low drain-source on-resistance : RDS(ON) = 2.5 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK5A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Rating.