TPV8100B Datasheet and Specifications PDF

The TPV8100B is a NPN SILICON RF POWER TRANSISTOR.

Key Specifications

Max Operating Temp200 °C

TPV8100B Datasheet

TPV8100B Datasheet (Motorola Semiconductor)

Motorola Semiconductor

TPV8100B Datasheet Preview

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplif.

high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit.
* To be used class AB for TV band IV and V.
* Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB
* Specifie.

TPV8100B Datasheet (Advanced Semiconductor)

Advanced Semiconductor

TPV8100B Datasheet Preview

The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. FEATURES INCLUDE: • Internal Input, Output Matching • Common Emitter Configuration • Gold Met.

INCLUDE:
* Internal Input, Output Matching
* Common Emitter Configuration
* Gold Metalization
* Emitter Ballasting PACKAGE STYLE .438X.450 4LFL MAXIMUM RATINGS IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W O O O O O O 1 = COLLECTOR #1 2 =.

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