TPV8100B Datasheet | Advanced Semiconductor

TPV8100B TPV8100B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV8100B is Designed for Transmitter Output Stages Covering TV Band IV and V, Operating at 28 V. Features INCLUDE: - Internal Input, Output Matching - mon Emitter Configuration - Gold Metalization - Emitter Ballasting PACKAGE STYLE .438X.450 4LFL MAXIMUM RATINGS IC VCER PDISS TJ TSTG θJC 12 A 40 V RBE = 10 Ω 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W O O O O O O 1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (MON) CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICER hFE Gp η Pout IC = 10 mA IC = 20 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V TC = 25...