TPV8100B Overview
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8100B/D NPN Silicon RF Power Transistor The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B.
TPV8100B Key Features
- To be used class AB for TV band IV and V
- Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum
- Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.)
- Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ
- 860 MHz NPN SILICON RF POWER TRANSISTOR
- 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C
- 10 Vdc Vdc Vdc mA (continued)
- continued (TC = 25°C unless otherwise noted)
- DYNAMIC CHARACTERISTICS
- dB % W
