| Part Number | Description | Manufacture |
|---|---|---|
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Insulated Gate Bipolar Transistor Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast S |
 International Rectifier |
|
|
Small Signal Zener Diodes • Zener voltage specified at 50 μA • Maximum delta VZ given from 10 μA to 100 μA • Very high stability • Low noise • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltag |
 Vishay Telefunken |
