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IRGS4715DPBF Datasheet – Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

International Rectifier (now Infineon)

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IRGS4715DPBF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGS4715DPBF
Manufacturer	International Rectifier (now Infineon)
File Size	642.58 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGS4715DPBF Datasheet

Overview

VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.

= 1.

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRGS4715DPbF D2‐Pak E C G IRGB4715DPbF TO‐220AB G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

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