IRGS4062DPBF Description
PD - 97355B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE.
IRGS4062DPBF Key Features
- Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Squa
IRGS4062DPBF Applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation