IRGS4062DPBF Datasheet | International Rectifier

Features - - - - - - - - - - Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package IRGS4062DPb F IRGSL4062DPb F VCES = 600V IC = 24A, TC = 100°C G E t SC ≥ 5µs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.65V Benefits - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation - Low EMI E G G C E D2 Pak IRGS4062DPb F TO-262 IRGSL4062DPb F G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Max. 600 48 24 96 96 48 24 96 ±20 ±30 250 125 -55 to +175 Units V c d Continuous Gate-to-Emitter Voltage °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket...