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PD - 96424
IRGS4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of The Parts Tested for (ILM) Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package
G E C
VCES = 600V IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
n-channel
C
VCE(on) typ. = 1.
IRGS4064DPBF Datasheet
