IRGS4064DPBF Datasheet | International Rectifier

Features - - - - - - - - - - Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5μs SCSOA Square RBSOA 100% of The Parts Tested for (ILM) Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C n-channel VCE(on) typ. = 1.6V Benefits - High Efficiency in a Wide Range of Applications - Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses - Rugged Transient Performance for Increased Reliability - Excellent Current Sharing in Parallel Operation - Low EMI D2Pak Gate Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Collector Emitter Max. 600 20 10 40 40 20 10 40 ±20 ±30 101 50 -55 to + 175 300 (0.063 in. (1.6mm) from case) Units V c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case...