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IRGS4045DPBF - Insulated Gate Bipolar Transistor

Features

  • vs. VGE ICE = 6.0A, L=600μH October 10, 2012 Thermal Response ( Z thJC ) IRGS4045DPbF 10 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (.

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IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE(on) typ.  1.
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