IRGS4065PBF Datasheet | International Rectifier

Features Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l IRGB4065Pb F IRGS4065Pb F Key Parameters 300 1.75 205 150 V V A °C VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c T J max D2Pak IRGS4065DPb F E C G n-channel TO-220 IRGB4065DPb F G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 70 40 205 178 71 1.4 -40 to + 150 300 Units V A c W W/°C °C 10lb in (1.1N m) x x Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 2 Junction-to-Ambient (PCB Mount) , D Pak d Parameter Typ. - - - 0.50 - - - - - - Max. - - - 62...