IRGS4065PBF Overview
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRGS4065PBF |
|---|---|
| Datasheet | IRGS4065PBF IRGB4065PBF Datasheet (PDF) |
| File Size | 811.57 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | IGBT |
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This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRGS4062DPBF | Power MOSFET |
| IRGS4064DPBF | Power MOSFET |
| IRGS4045DPBF | Insulated Gate Bipolar Transistor |
| IRGS4055PBF | PDP Trench IGBT |
| IRGS4056DPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS4086PbF | PDP Trench IGBT |
| IRGS4607DPBF | Insulated Gate Bipolar Transistor |
| IRGS4610DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS4615DPBF | Power MOSFET |
| IRGS4620DPBF | Power MOSFET |