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IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGS4056DPbF

Datasheet Details

Part number	IRGS4056DPbF
Manufacturer	International Rectifier
File Size	400.62 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGS4056DPbF Datasheet
Additional preview pages of the IRGS4056DPbF datasheet.

Product details

Features

Low VCE (ON) Trench IGBT Technology.
Low switching losses.
Maximum Junction temperature 175 °C.
5 µS short circuit SOA.
Square RBSOA.
100% of the parts tested for 4X rated current (ILM).
Positive VCE (ON) Temperature co-efficient.
Ultra fast soft Recovery Co-Pak Diode.
Tight parameter distribution.
Lead Free Package C G E n-channel Benefits.
High Efficiency in a wide range of.

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Published: May 4, 2015 |