IRGS4056DPbF Datasheet | International Rectifier

Features - Low VCE (ON) Trench IGBT Technology - Low switching losses - Maximum Junction temperature 175 °C - 5 µS short circuit SOA - Square RBSOA - 100% of the parts tested for 4X rated current (ILM) - Positive VCE (ON) Temperature co-efficient - Ultra fast soft Recovery Co-Pak Diode - Tight parameter distribution - Lead Free Package G E n-channel Benefits - High Efficiency in a wide range of applications - Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses - Rugged transient Performance for increased reliability - Excellent Current sharing in parallel operation - Low EMI IRGS4056DPb F VCES = 600V IC = 12A, TC = 100°C t SC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.55V C G D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current c Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current e Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) G Gate C Collector E...