Datasheet4U Logo Datasheet4U.com

IRGS4056DPbF - INSULATED GATE BIPOLAR TRANSISTOR

Key Features

  • Low VCE (ON) Trench IGBT Technology.
  • Low switching losses.
  • Maximum Junction temperature 175 °C.
  • 5 µS short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for 4X rated current (ILM).
  • Positive VCE (ON) Temperature co-efficient.
  • Ultra fast soft Recovery Co-Pak Diode.
  • Tight parameter distribution.
  • Lead Free Package C G E n-channel Benefits.
  • High Efficiency in a wide range of.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS4055PBF PDP Trench IGBT
IRGS4045DPBF Insulated Gate Bipolar Transistor
IRGS4062DPBF Power MOSFET
IRGS4064DPBF Power MOSFET
IRGS4065PBF IGBT
IRGS4086PbF PDP Trench IGBT
IRGS4607DPBF Insulated Gate Bipolar Transistor
IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGS4615DPBF Power MOSFET
IRGS4620DPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96197 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package C G E n-channel Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI IRGS4056DPbF VCES = 600V IC = 12A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ.