IRGS4055PBF
IRGS4055PBF is PDP Trench IGBT manufactured by International Rectifier.
Features
Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package l
IRGB4055Pb F IRGS4055Pb F
K ey Param eters
300 1.70 270 150 V V A °C
V CE m in V CE (O N) typ. @ 110A I RP ma x @ T C = 25° C T J ma x c
D2Pak IRGS4055DPb F n-channel
TO-220 IRGB4055DPb F
G Gate
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features bine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw
Max.
±30 110 60 270 255 102 2.04 -40 to + 150 300
Units
V A f c
W W/°C °C
10lb in (1.1N m) x x
Thermal Resistance
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D 2Pak d
Parameter
Typ.
- -
- 0.50
- -
- -
- -
Max.
- -
- 62...
