IRGS4055PBF Overview
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
| Part number | IRGS4055PBF |
|---|---|
| Datasheet | IRGS4055PBF-InternationalRectifier.pdf |
| File Size | 794.66 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | PDP Trench IGBT |
|
|
|
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRGS4056DPbF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS4045DPBF | Insulated Gate Bipolar Transistor |
| IRGS4062DPBF | Power MOSFET |
| IRGS4064DPBF | Power MOSFET |
| IRGS4065PBF | IGBT |
| IRGS4086PbF | PDP Trench IGBT |
| IRGS4607DPBF | Insulated Gate Bipolar Transistor |
| IRGS4610DPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS4615DPBF | Power MOSFET |
| IRGS4620DPBF | Power MOSFET |