0.08nA Datasheet | Specifications & PDF Download

HYG064N08NA1P/B Feature  80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailabl

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Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat

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FS6500-FS4500-ASILB Safety power system basis chip with CAN FD and LIN transceivers Rev. 4 — 5 August 2024 Product data sheet 1 General descriptio

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HY4008NA2P/B N-Channel Enhancement Mode MOSFET Feature  80V/200A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lea

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FS6500-FS4500-ASILB Safety power system basis chip with CAN FD and LIN transceivers Rev. 4 — 5 August 2024 Product data sheet 1 General descriptio

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HY4008NA2P/B N-Channel Enhancement Mode MOSFET Feature  80V/200A RDS(ON)=3.5 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lea

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HYG3208NA3P/B Feature  80V/120A RDS(ON)= 7mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (R

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Proximity Sensors Capacitive Teflon Housing Type CA, M18, DC TRIPLESHIELD™ • Featuring TRIPLESHIELD™ sensor protection • Adjustable sensing distance

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HYG064N08NA1P/B Feature  80V/120A RDS(ON)= 6.4mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailabl

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85V N-Channel MOSFET General Features Proprietary New Trench Technology RDS(ON),typ.=6.9 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recov

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HYG3208NA3P/B Feature  80V/120A RDS(ON)= 7mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (R

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SSPS7308NA Elektronische Bauelemente 17 A , 30 V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK128BG 0.08 nA Ultra small IQ 1.0 A Load Switch IC in Ultra Small Package TCK128BG TCK12

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