0.55 Datasheet | Specifications & PDF Download

LM555/NE555/SA555 Single Timer www.fairchildsemi.com Features • High Current Drive Capability (200mA) • Adjustable Duty Cycle • Temperature Stabilit

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IP5513 TWS Bluetooth Earphone Charging Box SOC integrated with MCU 1. Features  Flexible and low-cost customized program  Package: SOP16  Disch

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LD5537 09/07/2015 Green-Mode PWM Controller with Variable Frequency and Brown IN/OUT Protections REV. 01 General Description The LD5537 is built with

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CRE6559 FREQ SHUFFLING CRE6559 combines a dedicated current mode PWM controller with a high voltage power MOSFET. It is optimized for high performanc

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community NA555, NE555, SA555, SE555 SLFS022I – SEPTEMBER 1973 – REVIS

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F4558 F4558 、 F4558 F1458 ，。 · · · （） DIP、CSOP TO-8 、 （1/2） 132#（741000） 0938-8285884（T）8224113（F） 1 32（741000） 0938-8285884（T）8

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INTEGRATED CIRCUITS NE/SA/SE5532/5532A Internally-compensated dual low noise operational amplifier Product specification IC11 Data Handbook 1997 Sept

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NE555 SA555 - SE555 General-purpose single bipolar timers Features ■ Low turn-off time ■ Maximum operating frequency greater than 500 kHz ■ Timing fr

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NE555 PRECISION TIMER Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time-d

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NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared to

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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NJM5532 LOW-NOISE DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM5532 is a high performance dual low noise operational amplifier. Compared

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5550/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RAT

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CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max

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NJM4558 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM4558 is a dual high-gain operational amplifier with internal compensation circuit an

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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