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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5550/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3
2 BASE
1 EMITTER
MAXIMUM RATINGS Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
IC PD
PD
TJ, Tstg
2N5550 2N5551
140
160
160
180
6.0
600
625 5.0
1.5 12
– 55 to +150
Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.
2N5551 Datasheet
