0.550 Datasheet | Specifications & PDF Download

4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

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www.DataSheet.co.kr HT75XX-2 100mA Low Power LDO Features · Low power consumption · Low voltage drop · Low temperature coefficient · High input volta

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Data Sheet NE5550979A Silicon Power LDMOS FET R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 39.5 dBm TYP. (VDS = 7.

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Data Sheet NE5550279A Silicon Power LDMOS FET R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 FEATURES • High Output Power • High power added efficiency • H

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SE85XX 40V/2.6μA/200mA，Ultra-Low-Iq, Low Dropout LDO General Description Features SE85XX series is designed for power-sensitive  applications. It

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Data Sheet NE5550234 Silicon Power MOS FET FEATURES • • • • • R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 High Output Power : Pout = 33.0 dBm TYP. (VDS =

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IP5506 2A Charging / 2.4A Discharging Power Bank SOC With Integrated Digital Tube Driver 1. Features  Switch buck charger and boost  2.4A synchro

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HT7530/33/36/44/50 EOL Notification EOL Notification Holtek hereby formally gives End Of Life (EOL) notification that the HT7530, HT7533, HT7536, HT75

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.62

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www.DataSheet4U.com The NS16550A UART Design and Application Considerations The NS16550A UART Design and Application Considerations BACKGROUND UARTs

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LSP5503


























3A Synchronous Step

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P550HVN08.0 Product Specification Rev. 1.1 Model Name: P550HVN08.0 Issue Date : 2016/02/18 (Ϡ)Preliminary Specifications ()Final Specifications Cus

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FKV550N FKV550N 3.3 10.0 2.8 4.2 C 0.5 16.9 8.4 0.8 4.0 2.6 1.35 3.9 1.35 0.85 2.54 2.54 0.45 2.4 2.2 FKV550N – – – – – – – – –

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LSP5502 2A Synchronous Step Down DC/DC Converter FEATURES 2A Output Current Wide 4.5V to 27V Operating Input Range Integrated 120mΩ Power MOSFET Switc

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ESMT/EMP Features z True plug-and-play application, no driver is required for basic USB speaker application z Supports Windows Me/2000/XP/Vista/7 and

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IP6550 36V ， DCP 1   NMOS  ：4.5V 36V    ESR   CV/CC   BC1.2、Apple、  、  、、  、   ESD 4KV  VIN 48V 2     3

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Product Specification SPECIFICATION FOR APPROVAL LD550DUN ( ) Preliminary Specification ( ● ) Final Specification Title BUYER MODEL GENERAL 55.0”

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Transistors C8550 www.DataSheet4U.com

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