0030 Datasheet | Specifications & PDF Download

0030(：CST-IC0890) 、 00308Ω1.5W， 。 0030，20dB ，0030，。 、 ¾ ¾ z 2.4V—6.8V z <1uA ¾ () z 8Ω1.5W k （Vcc=6.8V ,THD=10% ） ¾ e z SOP-8 z eT 、

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N a t io n a l C o n t r o ls C o r p. Phone 800-323-2593 Fax 630-231-1377 Internet www.natcon.com www.nationalcontrols.com 630-231-5900 Time Delay

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BTH50030-1LUA Datasheet Power PROFET™ + 24/48V smart high-side power switch Features • PRO-SIL™ ISO 26262-ready for supporting the integrator in eva

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1-8 TIME DELAY RELAYS Delay On Make (Series Load) Q1T Series FEATURES ● ● ● ● ● ● ● ● 100% functionally tested Solid state digital timing 20:1 maxim

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InterFET Product Folder Technical Support Order Now N0030L N0030L Process Geometry Features • Low Input Capacitance: 5.0pF Typical • Low Gate Le

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1-8 TIME DELAY RELAYS Delay On Make (Series Load) Q1T Series FEATURES ● ● ● ● ● ● ● ● 100% functionally tested Solid state digital timing 20:1 maxim

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1-8 TIME DELAY RELAYS Delay On Make (Series Load) Q1T Series FEATURES ● ● ● ● ● ● ● ● 100% functionally tested Solid state digital timing 20:1 maxim

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VDS VGS Max RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 30 V ± 20 V 27 mΩ 40 mΩ PD - 96278B IRLML0030TRPbF HEXFET® Power MOSFET G1 S2

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1-8 TIME DELAY RELAYS Delay On Make (Series Load) Q1T Series FEATURES ● ● ● ● ● ● ● ● 100% functionally tested Solid state digital timing 20:1 maxim

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WBA0030-30A/B 1 – 3000 MHz LOW NOISE WIDE BAND AMPLIFIER REV B September 2013 Key Features Product Description Applications  50 Ohm Impedance 

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WBA0030-30A/B 1 – 3000 MHz LOW NOISE WIDE BAND AMPLIFIER REV B September 2013 Key Features Product Description Applications  50 Ohm Impedance 

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LMH0030 www.ti.com SNLS219G – JANUARY 2006 – REVISED APRIL 2013 LMH0030 SMPTE 292M/259M Digital Video Serializer with Video and Ancillary Data FIFO

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QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o

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DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev. B, January 2

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PMEG10030CELP 100 V, 3 A low leakage current Schottky barrier rectifier 10 March 2025 Product data sheet 1. General description Planar Schottky ba

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Specification for E-Paper AES400300A00-4.2ENRS Revision 1.2 A ES 400300 A00 4.2 E N R S / / / / Orient Display E-Paper Resolution 400 x 300 Revision

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Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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GPY0030B Audio Driver www.DataSheet4U.com Feb. 01, 2008 Version 1.2 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation with

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Datasheet SDS120J030G2 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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MCC Features • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # FST10020 THR

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