PF0030 Datasheet, Amplifier, Hitachi Semiconductor

PF0030 Features

• Amplifier
• High stability: Load VSWR = 20 : 1
• Low power control current: 400 µA
• Thin package: 5 mmt Ordering Information Type No PF0030 PF0032 Operating Frequency 82

PDF File Details

Part number:

PF0030

Manufacturer:

Hitachi Semiconductor

File Size:

61.55kb

Download:

📄 Datasheet

Description:

Mos fet power amplifier.

TAGS

PF0030

Hitachi Semiconductor

📁 Related Datasheet

PF0031 - MOS FET Power Amplifier Module (Hitachi)
w w at .D w h FET Power Amplifier Module for Mobile Phone MOS S a ADE-208-461 (Z) 1st Edition July 1, 1996 ee U 4 t m o .c PF0031 Application P.

PF0032 - MOS FET Power Amplifier (Hitachi Semiconductor)
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current.

PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4..

PF0027 - MOS FET Power Amplifier Module (Renesas Technology)
.. .. .. .. .. .. .. .

PF0100 - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical Data 14 channel configurable power management integrated circuit Document Number: MMPF0100 Rev. 20, 5/2022 P.

PF0100Z - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical data Document Number: MMPF0100Z Rev. 13.0, 5/2023 14 channel configurable power management integrated circu.

PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone (Hitachi Semiconductor)
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone ADE-208-097A (Z) 2nd Edition July 1996 Application For GSM CLASS2 890 to 915 MHz Features.

PF01410A - MOS FET Power Amplifier Module for GSM Handy Phone (Hitachi Semiconductor)
PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 .

PF01411A - MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C (Z) 4th Edition February 1997 Application • For E-GSM class4 880 to 915 MH.