PF0121 Datasheet - Hitachi Semiconductor

PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone

PF0121 Features

* Low power control current: 0.9 mA Typ

* High speed switching: 1.5 µsec Typ

* Wide power control range: 100 dB Typ Pin Arrangement

* RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 V

Datasheet Details

PF0121

Hitachi Semiconductor

51.97 KB

Mos fet power amplifier module for gsm mobile phone.

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