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PF0121 - MOS FET Power Amplifier Module for GSM Mobile Phone

Hitachi Semiconductor

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Datasheet Details

Part number	PF0121
Manufacturer	Hitachi Semiconductor
File Size	51.97 KB
Description	MOS FET Power Amplifier Module for GSM Mobile Phone
Datasheet	PF0121_HitachiSemiconductor.pdf

PF0121 Product details

Features

Low power control current: 0.9 mA Typ.
High speed switching: 1.5 µsec Typ.
Wide power control range: 100 dB Typ Pin Arrangement.
RF-B2 5 4 3 2 5 1 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND PF0121 Internal Diagram and External Circuit G GND Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout G GND Z1 FB1 C2 FB2 C1 Z2 Pin VAPC VDD Pout C1 = 0.01 µF (Ceramic chip capacitor) C2 = 330 µF (Aluminum Electrolyte Capacitor) FB = Ferrite bead BL01RN1-A62-001 (Manufacture:.

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Published: Mar 22, 2005 |