PF0121 Datasheet, Phone, Hitachi Semiconductor

PF0121 Features

  • Phone
  • Low power control current: 0.9 mA Typ
  • High speed switching: 1.5 µsec Typ
  • Wide power control range: 100 dB Typ Pin Arrangement
  • RF-B2 5 4 3 2 5 1

PDF File Details

Part number:

PF0121

Manufacturer:

Hitachi Semiconductor

File Size:

51.97kb

Download:

📄 Datasheet

Description:

Mos fet power amplifier module for gsm mobile phone.

Datasheet Preview: PF0121 📥 Download PDF (51.97kb)
Page 2 of PF0121 Page 3 of PF0121

TAGS

PF0121
MOS
FET
Power
Amplifier
Module
for
GSM
Mobile
Phone
Hitachi Semiconductor

📁 Related Datasheet

PF0100 - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical Data 14 channel configurable power management integrated circuit Document Number: MMPF0100 Rev. 20, 5/2022 P.

PF0100Z - 14-channel configurable power management (NXP)
NXP Semiconductors Data sheet: Technical data Document Number: MMPF0100Z Rev. 13.0, 5/2023 14 channel configurable power management integrated circu.

PF01410A - MOS FET Power Amplifier Module for GSM Handy Phone (Hitachi Semiconductor)
PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application • For GSM class4 .

PF01411A - MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-433C (Z) 4th Edition February 1997 Application • For E-GSM class4 880 to 915 MH.

PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • .

PF01412A - MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz .

PF0010 - High Frequency Power MOS FET Module (Renesas Technology)
.. DataShee . . DataSheet 4 U . .. et4U. DataShee . DataShe.

PF00105A - MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone ADE-208-447C (Z) 4th Edition February 1998 Features • • • • • Low voltage operation : 4..

PF0027 - MOS FET Power Amplifier Module (Renesas Technology)
.. .. .. .. .. .. .. .

PF0030 - MOS FET Power Amplifier (Hitachi Semiconductor)
PF0030 Series MOS FET Power Amplifier ADE-208-460 (Z) 1st Edition July 1996 Features • High stability: Load VSWR = 20 : 1 • Low power control current.

Stock and price

ITT Interconnect Solutions
Connector, KPSE02E14-12PF0 ITT Cannon KPSE02E14-12P-F0
RS
KPSE02E14-12P-F0 (121014-3269)
0 In Stock
Qty : 1 units
Unit Price : $45.23
No Longer Stocked
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts