PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone

Hitachi Semiconductor

Description

PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application * For GSM class4 890 to .

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Datasheet Specifications

Part number: PF01412A
Manufacturer: Hitachi Semiconductor
File Size: 25.87 KB
Datasheet: PF01412A_HitachiSemiconductor.pdf
Description: MOS FET Power Amplifier Module for E-GSM Handy Phone

Features

* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
* RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute

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PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone Hitachi Semiconductor

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