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PF01412A - MOS FET Power Amplifier Module for E-GSM Handy Phone

Datasheet Summary

Features

  • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement.
  • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10.

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Datasheet Details

Part number PF01412A
Manufacturer Hitachi Semiconductor
File Size 25.87 KB
Description MOS FET Power Amplifier Module for E-GSM Handy Phone
Datasheet download datasheet PF01412A Datasheet
Additional preview pages of the PF01412A datasheet.

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Full PDF Text Transcription

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PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.
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