Part number:
PF01412A
Manufacturer:
Hitachi Semiconductor
File Size:
25.87 KB
Description:
Mos fet power amplifier module for e-gsm handy phone.
Datasheet Details
PF01412A Features
* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
* RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute
Datasheet Details
PF01412A
Hitachi Semiconductor
25.87 KB
Mos fet power amplifier module for e-gsm handy phone.
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PF01412A Distributor