* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
* RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute
PF01412A
Hitachi Semiconductor
25.87 KB
Mos fet power amplifier module for e-gsm handy phone.
PF01412A
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-477B (Z) 3rd Edition February 1997 Application
* For GSM class4 890 to .
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