* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ra
PF01411B
Hitachi Semiconductor
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Mos fet power amplifier module for e-gsm handy phone.
PF01411B
MOS FET Power Amplifier Module for E-GSM Handy Phone
ADE-208-434B (Z) 3rd Edition Nov. 1997 Application
* For E-GSM class4 880 to 91.
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