Part number:
PF01411B
Manufacturer:
Hitachi Semiconductor
File Size:
26.55 KB
Description:
Mos fet power amplifier module for e-gsm handy phone.
PF01411B_HitachiSemiconductor.pdf
Datasheet Details
PF01411B Features
* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ra
PF01411B_HitachiSemiconductor.pdf
Datasheet Details
PF01411B
Hitachi Semiconductor
26.55 KB
Mos fet power amplifier module for e-gsm handy phone.
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PF01411B Distributor