Datasheet Specifications
- Part number
- PF01411B
- Manufacturer
- Hitachi Semiconductor
- File Size
- 26.55 KB
- Datasheet
- PF01411B_HitachiSemiconductor.pdf
- Description
- MOS FET Power Amplifier Module for E-GSM Handy Phone
Description
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov.1997 Application * For E-GSM class4 880 to 91.
Features
* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum RaPF01411B Distributors
📁 Related Datasheet
📌 All Tags