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PF01411B - MOS FET Power Amplifier Module for E-GSM Handy Phone

PF01411B Description

PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov.1997 Application * For E-GSM class4 880 to 91.

PF01411B Features

* High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ra

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Datasheet Details

Part number
PF01411B
Manufacturer
Hitachi Semiconductor
File Size
26.55 KB
Datasheet
PF01411B_HitachiSemiconductor.pdf
Description
MOS FET Power Amplifier Module for E-GSM Handy Phone

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MOS FET Power Amplifier Module for E-GSM Handy Phone Hitachi Semiconductor
Hitachi Semiconductor PF01411B-like datasheet

PF01411B Stock/Price