* 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC vo
PF01410A
Hitachi Semiconductor
25.37 KB
Mos fet power amplifier module for gsm handy phone.
PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd. Edition November 1997 Application
* For GSM.
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