Part number:
PF01410A
Manufacturer:
Hitachi Semiconductor
File Size:
25.37 KB
Description:
Mos fet power amplifier module for gsm handy phone.
PF01410A_HitachiSemiconductor.pdf
Datasheet Details
PF01410A Features
* 4.8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC vo
PF01410A_HitachiSemiconductor.pdf
Datasheet Details
PF01410A
Hitachi Semiconductor
25.37 KB
Mos fet power amplifier module for gsm handy phone.
📁 Related Datasheet
PF01411A MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone (Hitachi Semiconductor)
PF0100 14-channel configurable power management (NXP)
PF0100Z 14-channel configurable power management (NXP)
PF0121 MOS FET Power Amplifier Module for GSM Mobile Phone (Hitachi Semiconductor)
PF0010 High Frequency Power MOS FET Module (Renesas Technology)
PF00105A MOS FET Power Amplifier Module for AMPS Handy Phone (Hitachi Semiconductor)
PF01410A Distributor