IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,.
CRST045N10N - SkyMOS1 N-MOSFET
() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS.IPP045N10N3G - MOSFET
IPP045N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.045N10N - MOSFET
IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.IPP045N10N3 - MOSFET
IPP045N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.IPA045N10N3G - MOSFET
IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.IPI045N10N3G - Power-Transistor
IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F.IPC045N10N3 - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor BareDie OptiMOS™3PowerMOSTransistorChip IPC045N10N3 DataSheet Rev.2.5 Final Industrial.IPA045N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi.IPA045N10N3 - MOSFET
IPA045N10N3G MOSFET OptiMOSTM3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylow.