045N10N (Infineon)
MOSFET
IPA045N10N3 G
MOSFET
OptiMOSTM3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low
(40 views)
CRST045N10N (CR Micro)
SkyMOS1 N-MOSFET
()
CRST045N10N, CRSS042N10N
SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A
Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS
(31 views)
IPP045N10N3G (Infineon Technologies)
MOSFET
IPP045N10N3 G
MOSFET
OptiMOSª3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low
(19 views)
IPP045N10N3 (Infineon)
MOSFET
IPP045N10N3 G
MOSFET
OptiMOSª3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low
(17 views)
HYG045N10NS1B (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG045N10NS1P/B
Feature
100V/160A RDS(ON)=3.8mΩ (typ.) @ VGS = 10V
100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Avai
(16 views)
HYG045N10NS1P (HUAYI)
N-Channel Enhancement Mode MOSFET
HYG045N10NS1P/B
Feature
100V/160A RDS(ON)=3.8mΩ (typ.) @ VGS = 10V
100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Avai
(16 views)
045N10N (VBsemi)
N-Channel 100V MOSFET
045N10N-VB TO220
045N10N-VB TO220 Datasheet
N-Channel 100 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) a C
(15 views)
IPI045N10N3G (Infineon Technologies)
Power-Transistor
IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F
(14 views)
IPA045N10N3 (Infineon)
MOSFET
IPA045N10N3 G
MOSFET
OptiMOSTM3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low
(12 views)
IPC045N10N3 (Infineon)
MOSFET
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
Bare Die
OptiMOS™3 Power MOS Transistor Chip IPC045N10N3
Data Sheet
Rev. 2.5 Final
Industrial
(10 views)
IPA045N10N3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi
(10 views)
IPA045N10N3G (Infineon Technologies)
MOSFET
IPA045N10N3 G
MOSFET
OptiMOSTM3 Power-Transistor, 100 V
Features
• N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low
(9 views)