045N10N Datasheet | Specifications & PDF Download

045N10N-VB TO220 045N10N-VB TO220 Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a C

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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() CRST045N10N, CRSS042N10N SkyMOS1 N-MOSFET 100V, 3.6mΩ, 120A Features • Uses CRM(CQ) advanced SkyMOS1 technology • Extremely low on-resistance RDS

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IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (F

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi

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IPP045N10N3 G MOSFET OptiMOSª3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC045N10N3 Data Sheet Rev. 2.5 Final Industrial

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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