04N60C3 Datasheet | Specifications & PDF Download

63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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6331 & 63$1 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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6331 & 63$1 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-251(IPAK) package ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak curr

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Isc N-Channel MOSFET Transistor SPB04N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanch

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63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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63'1 & 6381 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH VDS#Tjmax  9 5'6

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Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A Cool MOS™ Power Transistor Feature • New revolutionary high v

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source O

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www.DataSheet4U.com 63S1 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDO

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isc N-Channel MOSFET Transistor SPP04N60C3，ISPP04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.95Ω ·Enhancement mode ·Fast Switchin

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