Cool MOS™ Power Transistor Feature • New revol.
SPI07N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.SPI07N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a.SPU07N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge •.SPD07N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge •.07N60S5 - SPI07N60S5
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a.SPP07N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPP07N60S5,ISPP07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching.SPB07N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.SPDU07N60S5 - Cool MOS Power Transistor
SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • .SPP07N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a.SPU07N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.SPB07N60S5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor SPB07N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.SPD07N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanche .