1.5T Datasheet | Specifications & PDF Download

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

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Advanced Power Electronics Corp. AP85T03GS/P Pb Free Plating Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requir

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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IKW25N120T2 TrenchStop® 2nd generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter C

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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http://www.ncepower.com Pb Free Product NCEP85T16 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology tha

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http://www.ncepower.com Pb Free Product NCEP85T25 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25 uses Super Trench technology tha

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 16S45T 1． DC-DC 2． l 、 l 、 3． TO-220( RoHS ) 4． 4.1 ，Tamb= 25℃ 1. (A1) 2 . (K)

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NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and

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EN25T80 EN25T80 8 Mbit Uniform Sector, Serial Flash Memory with Dual Data Mode FEATURES • Single power supply operation - Full voltage range: 2.7-3.6

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement mode power field effect transis

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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SVD4N65T/SVD4N65F 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is

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AOD5T40P 400V,3.9A N-Channel MOSFET General Description • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capabi

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http://www.ncepower.com Pb Free Product NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology tha

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NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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