1.5T Datasheet | Specifications & PDF Download

Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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http://www.ncepower.com Pb Free Product NCEP85T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology tha

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IP6525T 18W OUTPUT STEP-DOWN CONVERTER with FAST CHARGE PROTOCOLS (DCP/QC2.0/QC3.0/FCP/AFC) 1 Features  Synchronous step-down converter  Built-i

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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http://www.ncepower.com Pb Free Product NCEP15T14 NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14 uses Super Trench technology tha

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TO： File No. Issue Date： Revision Date： PN-RD-0023B 2012 (Y)09 (M)25 (D) 2012 (Y)11 (M)02 (D) 《 · 》 New Revision Product Specification Produ

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 16S45T 1． DC-DC 2． l 、 l 、 3． TO-220( RoHS ) 4． 4.1 ，Tamb= 25℃ 1. (A1) 2 . (K)

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CRG75T65AK5SD CRG75T65AK5SD FS IGBT ， ，。 RoHS 。 ● FS ， ； ● ：VCE(sat),TYP=1.45V @IC=75A,VGE=15V ； ● ； VCES 650 V IC 75 A Ptot （TC=25℃）

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency DDR2-667 Speed Sorts (CL-tRCD-tRP) Parameter Max. Clock Freq

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http://www.ncepower.com Pb Free Product NCEP85T16 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology tha

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NCE65TF130T N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTH200N085T IXTQ200N085T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(o

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www.DataSheet4U.com BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Features • Pb−Free Packages are Availab

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CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy parallel operation. • Short collector time-5us. • High

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www.DataSheet4U.com ADVANCED INFORMATION 2V Control Triple-Band GSM/DCS/PCS SP5T Switch 0.5 – 2.0 GHz Features • • • • • GSM Power Handling with +2.0

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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NCE65TF130D,NCE65TF130,NCE65TF130F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super

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