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TB2903HQ - Maximum Power 47W BTL x 4-Ch Audio Power-IC
TB2903HQ TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2903HQ Maximum Power 47 W BTL × 4-ch Audio Power IC The TB2903HQ is 4-ch BTL.TDA7266SA - 7W+7W DUAL BRIDGE AMPLIFIER
TDA7266SA 7W+7W DUAL BRIDGE AMPLIFIER s s WIDE SUPPLY VOLTAGE RANGE (3.5-18V) MINIMUM EXTERNAL COMPONENTS – NO SWR CAPACITOR – NO BOOTSTRAP – NO BOUC.LA42072 - 7W x 2ch Power Amplifier
Ordering number : ENA0315 LA42072 Monolithic Linear IC Audio Output for TV application 7W × 2ch Power Amplifier Overview LA42072 is 7W 2-channel AF.MIX2029 - 7W single channel class-F audio power amplifier
MIX2029 7W F MIX2029、7WF 。 MIX2029 PSRR MIX2029RF。 PWM、PCB ,。90%, MIX2029 。 MIX2029,。 。POP , MIX2029ESOP8 D: -7.5W (VDD=6.0V, RL =2 Ω,THD+N=.BD28623MUV - 17W+17W Class D Speaker Amplifier
Datasheet Middle Power Class-D Speaker Amplifier Series 17W+17W Class D Speaker Amplifier for Digital Input BD28623MUV General Description BD28623MU.HT6828 - 4.7W anti-sharpening dual channel Class D audio power amplifier
.IS67WVE1M16EBLL - 16Mb Async/Page PSRAM
IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WV.IS67WVE2M16ALL - 1.8V Core Async/Page PSRAM
IS66WVE2M16ALL IS67WVE2M16ALL 1.8V Core Async/Page PSRAM Overview The IS66WVE2M16ALL is an integrated memory device containing 32Mbit Pseudo Static Ra.SP2038P - Class AB 2.7W Stereo Audio Power Amplifier
www.DataSheet.co.kr ³ ÏÉ Ðî ¾Û ÎÚ ¢Ê ¿ Æ ¼ Ó Þ ¹ « Ë AB2.7W 2038 2.2W。5V,4Ω, THD<10%、2.2W ;4Ω,2.5W 。, 。 2038,,, 2038 。 2038 ,,, ()。 SP SP SP SP SSS.TB2959HQ - Maximum Power 47W BTL x 4-ch Audio Power IC
TB2959HQ Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2959HQ Maximum Power 47W BTL 4-ch Audio Power IC 1. Description The TB2959HQ is a.NC7WZ17 - TinyLogic UHS Dual Buffer
TinyLogic UHS Dual Buffer with Schmitt Trigger Inputs NC7WZ17 Description The NC7WZ17 is a dual buffer with Schmitt trigger inputs from onsemi’s Ultr.IS67WVC4M16ECLL - 64Mb Async/Page/Burst CellularRAM
IS66WVC4M16EALL/CLL IS67WVC4M16EALL/CLL 64Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC4M16EALL/CLL is an integrated memory device containi.AFP7317WS - P-Channel MOSFET
Alfa-MOS Technology General Description AFP7317WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.IS67WVE1M16TBLL - 16Mb Async/Page PSRAM
IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WV.M0347WC240 - Soft Recovery Diode
Date:- 17 Oct 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0347WC200 to M0347WC250 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS Repet.M27W101 - 1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM
M27W101 1 Mbit (128Kb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V –.M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .MSC0207W - Dual P-Channel MOSFET
MSC0207W -20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -20V,ID = -7A RDS(ON) < 27mΩ @ VGS=-4.5V RDS(ON) < 39mΩ @ .