10-page Datasheet | Specifications & PDF Download

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E2G0009-17-41 ¡ Semiconductor MSM511000C/CL ¡ Semiconductor This version: Jan. 1998 MSM511000C/CL Previous version: May 1997 1,048,576-Word ¥ 1-Bit

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AUSTIN SEMICONDUCTOR, INC. MT4C1004J MT5C1005 883C 4 MEG 256K x x1 4 DRAM SRAM DRAM AVAILABLE AS MILITARY SPECIFICATONS • SMD 5962-90622 • MIL-STD-8

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Features • Fast Read Access Time – 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128 Bytes – Internal Control Timer

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(Rev. 1.1) MITSUBISHI LSIs M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S FAST PAGE MODE 67

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(Rev. 1.1) MITSUBISHI LSIs M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S FAST PAGE MODE 67

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M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s 1 Mbit PAGED Flash Memory s 128 BYTE PAGE PROGRA

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FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access:70ns (max.) - Page access:25ns (max.) • Page

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4 PIN LONG CREEPAGE SOP PHOTOTRANSISTOR PHOTOCOUPLER EL101X-G Series Schematic Features: • Free halogens compliant • Current transfer ratio (CTR: 50

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M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface PRELIMINARY DATA s s s s s s s s s s s s s 1 Mbit PAGED Flash Memor

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www.DataSheet4U.com PRELIMINARY MX23L12810A 128M-BIT PAGE MODE MASK ROM (SOP) FEATURES • Bit organization - 8M x 16 (word mode) • Fast access time -

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FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access:70ns (max.) - Page access:25ns (max.) • Page

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PC110L/PC111L/PC112L/PC113L PC110L/PC111L PC112L/PC113L s Features 1. Long creepage distance type ( Creepage distance : 8mm or more ) *1 2. Internal

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FEATURES • Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode) • Fast access time - Random access:70ns (max.) - Page access:25ns (max.) • Page

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