1000V Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 8N100-C 8.0A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 8N100-C provide excellent RDS(ON), low gate charge and

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LT1363 70MHz, 1000V/µs Op Amp FEATURES s s s s s s s s s s s s s s s s DESCRIPTIO 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5mA Maximum Supply Curre

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UNISONIC TECHNOLOGIES CO., LTD 6N100-FC Power MOSFET 6A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low

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1N5400G-K – 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● Glass passivated chip junction ● High current capability, L

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200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102A - 1110A 1102FA - 1110FA 1102UFA - 1110UFA ELEC

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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TP15DU ： 15W 2.5KV 100-1000VDCDC/DC TP15DU15W，100-1000VDC 、、DC-DC， ，， 。 ：100-1000VDC, ， 、 ：–40℃85℃ 、 、 TP15DU600S05 TP15DU600S12 TP

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1N5400G-K – 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● Glass passivated chip junction ● High current capability, L

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® STW8NB100 N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH™ MOSFET PRELIMINARY DATA TYPE STW8NB100 s s s s s s s V DSS 1000 V R DS(on) < 1.5 Ω

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200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102A - 1110A 1102FA - 1110FA 1102UFA - 1110UFA ELEC

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S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Package JEDEC TO

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ABS20M Taiwan Semiconductor CREAT BY ART 2A, 1000V Glass Passivated Bridge Rectifier FEATURES - Glass passivated junction - Ideal for automated place

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http://www.fujielectric.com/products/semiconductor/ 1MBI1000VXB-170EH-50 IGBT MODULE (V series) 1700V / 1000A / 1 in one package IGBT Modules Featu

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LT1364/LT1365 Dual and Quad 70MHz, 1000V/µs Op Amps FEATURES s s s s s s s s s s s s s s s s DESCRIPTIO 70MHz Gain Bandwidth 1000V/µs Slew Rate 7.5

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1N5400G-K – 1N5408G-K Taiwan Semiconductor 3A, 50V - 1000V Standard Rectifier FEATURES ● Glass passivated chip junction ● High current capability, L

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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ABS20M-T Taiwan Semiconductor 2A, 1000V Glass Passivated Bridge Rectifier FEATURES ● Glass passivated junction ● Ideal for automated placement ● Reli

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