100Gb Datasheet | Specifications & PDF Download

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 100 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische

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Datasheet RL78/G23 RENESAS MCU R01DS0395EJ0130 Rev.1.30 Jan 31, 2024 True low-power platform, 41-µA/MHz operating current, 210-nA data retention cu

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Datasheet RL78/G23 RENESAS MCU R01DS0395EJ0130 Rev.1.30 Jan 31, 2024 True low-power platform, 41-µA/MHz operating current, 210-nA data retention cu

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100Gb/s QSFP28 Transceiver PRODUCT NUMBER: TQS-Q74H9-JCA Specification Quad Small Form-factor Pluggable Optical Transceiver Module 100GBASE-SR4 Order

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SKM100GB12T4 SEMITRANS® 2 Fast IGBT4 Modules SKM100GB12T4 Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. gen

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SPM100GB601S1 2-PACK IGBT Module 100A 600V General Description IGBT power module provides ultra low conduction loss as well as short circuit ruggedn

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BSM 100 GB 120 DN2K IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB

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DIODE MODULE DD(KD)100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips

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SKM100GB17E4 SEMITRANS® 2 IGBT4 Modules SKM100GB17E4 Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. G

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SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1) SIDACtor® Series - DO-15 Agency Approvals Agency Agency File Number E133083 Pinou

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SKM 100GB124D Absolute Maximum Ratings Symbol Conditions IGBT 6-7 -:  3 24 5-     $  ( Values 0211 041 011 041 ; 21 >1 ???

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SKM 100GB128D Absolute Maximum Ratings Symbol Conditions IGBT  % %45 6    #** 8 6 9 )* 8  : 1)**  /  1-* . %<45)$%< 

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SKM100GB12F4 SEMITRANS® 2 High Speed IGBT4 Modules SKM100GB12F4 Features* • High speed trench and field-stop IGBT • CAL4 ultra-fast = soft switching

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BSM 100 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 100 GB

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DIODE MODULE DD(KD)100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips

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SKM100GB12V Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 720 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25

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SIDACtor® Protection Thyristors Baseband Protection (Voice-DS1) SIDACtor® Series - DO-15 Agency Approvals Agency Agency File Number E133083 Pinou

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BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate •

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SKM 100GB125DN SEMITRANS® 2N Ultra Fast IGBT Module SKM 100GB125DN Features                    

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SKM 100GB173D Absolute Maximum Ratings Symbol Conditions IGBT &6 & &9: 3 4 .0 5&          Values +1,, ++, *10+0, < ., @, ///

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