10N03L Datasheet | Specifications & PDF Download

IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO

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Features Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current Application Power Tool Boost Converters fo

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IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO

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IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to

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() CRTE110N03LZ Trench N-MOSFET 30V, 7.5mΩ, 19A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excel

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IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO

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IPD10N03LA IPS10N03LA IPF10N03LA IPU10N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to

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www.DataSheet4U.com IPB10N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for

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Silicon N-Channel Power MOSFET ○R CRTE110N03L2D-G General Description： CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by ad

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HYG110N03LR1S N-Channel Enhancement Mode MOSFET Feature z 30V/10A RDS(ON)=8.5mΩ(typ.) @VGS = 10V RDS(ON)=12.5 mΩ(typ.) @VGS = 4.5V z 100% Avalanche

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