Datasheet Details
| Part number | CRTE110N03L2D-G | 
|---|---|
| Manufacturer | CR Micro | 
| File Size | 652.95 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
           | 
    
		  | Part number | CRTE110N03L2D-G | 
|---|---|
| Manufacturer | CR Micro | 
| File Size | 652.95 KB | 
| Description | Silicon N-Channel Power MOSFET | 
| Datasheet | 
        
           | 
    
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is SOP8, which accords with the RoHS standard.
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