CRTE110N03L2D-G - Silicon N-Channel Power MOSFET
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for s
CRTE110N03L2D-G Features
* 30 V 10 A 2 W 9.8 mΩ
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halogen Free Applications： Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise spe
