CRTE110N03L2D-G Silicon N-Channel Power MOSFET

CR Micro

Description

Silicon N-Channel Power MOSFET ○R CRTE110N03L2D-G General .
CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switch.

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CRTE110N03L2D-G Datasheet Preview — Preview of CRTE110N03L2D-G PDF

Datasheet Specifications

Part number: CRTE110N03L2D-G
Manufacturer: CR Micro
File Size: 652.95 KB
Datasheet: CRTE110N03L2D-G-CRMicro.pdf
Description: Silicon N-Channel Power MOSFET

Features

* 30 V 10 A 2 W 9.8 mΩ
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

Applications

* Power switch circuit of adaptor and charger. Absolute（TA= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TA = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche

CRTE110N03L2D-G Distributors

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CRTE110N03L2D-G Silicon N-Channel Power MOSFET CR Micro

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