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CRTE110N03L2D-G Datasheet - CR Micro

CRTE110N03L2D-G - Silicon N-Channel Power MOSFET

CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for s

CRTE110N03L2D-G Features

* 30 V 10 A 2 W 9.8 mΩ

* Fast Switching

* Low ON Resistance

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications: Power switch circuit of adaptor and charger. Absolute(TA= 25℃ unless otherwise spe

CRTE110N03L2D-G-CRMicro.pdf

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Datasheet Details

Part number:

CRTE110N03L2D-G

Manufacturer:

CR Micro

File Size:

652.95 KB

Description:

Silicon n-channel power mosfet.

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