CRTE210P04L2-G Silicon P-Channel Power MOSFET

Huajing Microelectronics

Description

Silicon P-Channel Power MOSFET CRTE210P04L2-G General .
CRTE210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve.

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Datasheet Specifications

Part number: CRTE210P04L2-G
Manufacturer: Huajing Microelectronics
File Size: 1.10 MB
Datasheet: CRTE210P04L2-G-HuajingMicroelectronics.pdf
Description: Silicon P-Channel Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤21 mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test

CRTE210P04L2-G Distributors

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CRTE210P04L2-G Silicon P-Channel Power MOSFET Huajing Microelectronics

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