CRTE210P04L2-G Datasheet, Mosfet, Huajing Microelectronics

CRTE210P04L2-G Features

• Mosfet
• Fast Switching
• Low ON Resistance(Rdson≤21 mΩ)
• Low Gate Charge
• Low Reverse transfer capacitances
• 100% Single Pulse avalanche energy Tes

PDF File Details

Part number:

CRTE210P04L2-G

Manufacturer:

Huajing Microelectronics

File Size:

1.10MB

Download:

📄 Datasheet

Description:

Silicon p-channel power mosfet. CRTE210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduct

CRTE210P04L2-G Application

• Applications The package form is SOP-8L, which accords with the RoHS standard. Features：
• Fast Switching
• Low ON Resistance(Rdson

TAGS

CRTE210P04L2-G

Huajing Microelectronics

📁 Related Datasheet

CRTE200N06L2D-G - Trench N-MOSFET (CR Micro)
Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE.

CRTE280P06L2-G - Trench P-MOSFET (CR Micro)
Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE.

CRTE045N03L - Trench N-MOSFET (CR Micro)
() CRTE045N03L Trench N-MOSFET 30V, 2.9mΩ, 30A Features • Uses CRM(CQ) advanced SkyMOS4 technology • Extremely low on-resistance RDS(on) • Excellent.

CRTE10DN06LD-G - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET CRTE10DN06LD-G General Description： CRTE10DN06LD-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d.

CRTE110N03L2D-G - Silicon N-Channel Power MOSFET (CR Micro)
Silicon N-Channel Power MOSFET ○R CRTE110N03L2D-G General Description： CRTE110N03L2D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by ad.

CRTE110N03LZ - Trench N-MOSFET (CR Micro)
() CRTE110N03LZ Trench N-MOSFET 30V, 7.5mΩ, 19A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excel.

CRTE900N15N - Trench N-MOSFET (CR Micro)
() CRTE900N15N Trench N-MOSFET 150V, 63mΩ, 6.2A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excel.

CRT-40 - Latching SPDT Coaxial Switch (Teledyne)
COAX SWITCHES Series CCRT-40/CRT-40 DC–40 GHz, Terminated Latching SPDT Coaxial Switch PART NUMBER DESCRIPTION CCRT-40 Commercial, Terminated DC-4.

CRT0402 - Thin Film Precision Chip Resistors (BOURNS)
01C *RoHS COMPLIANT Features ■ Ultra-tight tolerance ■ Wide resistance range ■ RoHS pliant* ■ Four package sizes available Applications ■ Current.

CRT0402-AS - Sulfur-Resistant Thin Film Precision Chip Resistors (BOURNS)
*RoHS COMPLIANT Features ■ Ultra-tight tolerance ■ Wide resistance range ■ RoHS pliant* ■ Four package sizes available ■ Sulfur-resistant Applica.