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CRTE210P04L2-G

Silicon P-Channel Power MOSFET

CRTE210P04L2-G Features

* Fast Switching

* Low ON Resistance(Rdson≤21 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ -40 V -8 A 2.2 W 18 mΩ Abs

CRTE210P04L2-G General Description

CRTE210P04L2-G, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is SO.

CRTE210P04L2-G Datasheet (1.10 MB)

Preview of CRTE210P04L2-G PDF

Datasheet Details

Part number:

CRTE210P04L2-G

Manufacturer:

Huajing Microelectronics

File Size:

1.10 MB

Description:

Silicon p-channel power mosfet.

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TAGS

CRTE210P04L2-G Silicon P-Channel Power MOSFET Huajing Microelectronics

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